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Presolicitation of Development of Bulk Gallium Oxide Substrates

 

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Thursday, August 14, 2014
 

[THIS IS NOT A CALL FOR PROPOSALS . DO NOT SUBMIT PROPOSALS AT THIS TIME. ANY PROPOSALS RECIEVED WILL BE DISREGARDED] 

Summary:

Next generation military sensing systems depend on continued electronic materials innovation leading to new electronic device technologies with enabling performance capabilities. Recently, Beta-Gallium Oxide (β-Ga2O3) has begun to receive attention for its unique properties, including its wide bandgap of about 4.8 eV and estimated electric field breakdown of 8 MV/cm, which is about two to three times larger than that of either SiC or GaN. Exploitation of β-Ga2O3 semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military radio frequency and power switching components utilized in radar, electronic warfare and communication systems. Critical to the realization of this promise is the availability of β-Ga2O3 substrates. There is a need for a US source to develop and scale β-Ga2O3 crystal growth and substrate fabrication processes to underpin and help drive the development of next generation ultra-high performance devices. The Air Force Research Laboratories (AFRL) Sensors Directorate is interested in the development and demonstration of Czochralski growth of large single crystal, semi-insulating, β-Ga2O3 boules and polished substrates. The Government contemplates a program lasting up to 27 months. Direct all questions to the Contracting point of contact or Program Manager identified in the announcement.

For more information, please visit:

https://www.fbo.gov/index?s=opportunity&mode=form&id=d7d5609c0e1265c646f8bf4f75bf416b&tab=core&_cview=0

 
 

 

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