Wide bandgap material research at KTH in Kista/Stockholm
Speaker:
Margaret Linnarsson, Royal Institute of Technology (KTH), Stockholm Sweden
Date & Time:
May 19, 2008 - 1:30pm
Location:
NPL 201 | Wide bandgap material research at KTH in Kista/Stockholm Laboratory for Surface Modification |
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| Margaret Linnarsson, Royal Institute of Technology (KTH), Stockholm Sweden 1:30 PM, NPL 201 Wide bandgap materials, like silicon carbide and diamond, have a huge potential for energy saving electronics. KTH in Kista has a long academic tradition of application motivated basic research on silicon carbide where material characterization is an important part of the activity. This talk will review our results on hydrogen and dopant diffusion and interaction in silicon carbide. Hosted by Torgny Gustafsson |