|Atomically-controlled Oxide-Metamaterials |
|Seongshik Oh, Physics and Astronomy Department|
12:10 PM, CCR 201
Atomic-scale or nano-scale heterostructure engineering in IV, III-V and II-VI semiconductors, and elemental metals has led to many discoveries and developments such as fractional quantum Hall effect, semiconductor lasers, giant magnetoresistance and magnetic tunnel junctions. The key player behind this success is the Molecular Beam Epitaxy (MBE) technique, with which one can grow arbitrary heterostructures of atomic-precision. One of the main efforts in our group is to extend the realm of this proven technology to a newly-emerging and lessexplored material system, the complex oxides.
Complex oxides exhibit much more copious electronic properties than do the conventional semiconductors and the elemental metals, such as semiconducting, high Tc superconducting, colossal magnetoresistive, (half- )metallic, (anti- )ferromagnetic, ferro(para, piezo, pyro)electric, and multiferroic behaviors. Furthermore, researchers have already demonstrated that when two complex-oxide systems are interfaced with each other, multifunctional, or sometimes completely new, properties tend to emerge. This suggests that if we apply the atomic-scale heterostructure engineering scheme to this complex oxide material system, we may discover many more novel properties and applications.
However, compared with the conventional semiconductor and metal MBE's, complex-oxide MBE requires much higher level of technical sophistication. In order to tackle this problem effectively, we are currently building a unique oxide-MBE system, which is scheduled to be up and running by fall of 2008. Utilizing the new oxide-MBE system and drawing on the strong theoretical and characterization support of other Rutgers groups, we will synthesize and study nanostructured oxide "metamaterials" and search for novel functionalities in these emerging territories.
Host: Lisa Klein