|The role of high mobility MBE in the discovery of new semiconductor physics |
Physics and Astronomy
Bell Laboratories, Alcatel-Lucent
4:00 PM, Serin Physics E385
I will discuss why the GaAs-AlAs interface is ideal for making near-perfect low-dimensional electron systems by MBE, and the crucial correlation between high electron mobility and low physical disorder in our MBE samples. Then I will give examples of how improving the mobility has allowed the discovery of composite fermions and other new physics that is now pointing toward a possible key role in the emerging new field of topological quantum computing. I will also touch briefly on the role of MBE in fabricating near-ideal nanostructures and in the quest to achieve Bose-Einstein condensation of semiconductor excitons.