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Batson, Philip

Department(s): IAMDN Executive Committee
                          Materials Science and Engineering
                          Physics and Astronomy
Research Interests: Spatially resolved Electron Energy Loss Spectroscopy (EELS) using the Scanning Transmission Electron Microscope (STEM)
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Telephone: 848-445-8248


Philip E. Batson is a Distinguished Research Professor at the Institute for Advanced Materials, Devices and Nanotechnology, (IAMDN) Rutgers University, with appointments in Physics, and Materials Science, after retirement from the IBM Thomas J. Watson Research Center in 2009. His education was at Cornell University, receiving the Ph.D. in Applied Physics in 1976.  After post-doctoral work at the Cavendish Laboratory, he moved to IBM in 1978. During the 1980’s he pioneered spatially resolved Electron Energy Loss Spectroscopy in the Scanning Transmission Electron Microscope, with studies of surface plasmon scattering in metal nanoparticle systems. Later, he explored local electronic structure in Si-Ge based materials, obtained from detailed shapes of the Si 2p core loss excitation.  Currently, he is exploring EELS in using 10 meV energy resolution in the aberration corrected STEM. For his contribution to sub-Angstrom imaging, he received the 2002-2003 Scientific American 50 Award for Leadership in Imaging Sciences.  The project to extend EELS resolution was one of two NSF projects cited by the White House in 2010 as one of "100 Recovery Act Projects that are changing America." He has authored about 200 publications and is a Fellow of the American Physical Society and the Microscopy Society of America.   


STEM EELS Introduction
The IBM Instrument
Spatially Resolved EELS
Aberration Corrected Imaging
Dynamic Movement of Atoms
Spectrometer Description
Nion Aberration Corrector
Monochomator Project

Scanning Transmission Electron Microscopy
Electron microscopy, using aberration free electron optics, can aid semiconductor development by providing atomic level analysis of composition, structure and function in buried regions of nanoscale devices.

Image: Si [110] projection using a 0.08nm probe at 120 keV

STEM picture

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