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Single Ag and Ge Atoms on Si(111): Where They Are and How They Move

Speaker: Michael Loy, Hong Kong University of Science and Technology
Date & Time: June 23, 2006 - 1:30pm
Location: Room 260, Wright-Rieman Chemistry Laboratory


Single Ag and Ge Atoms on Si(111): Where They Are and How They Move
Laboratory for Surface Modification


Michael Loy
Hong Kong University of Science and Technology
Friday, June 23, 1:30 PM, Room 260, Wright-Rieman Chemistry Laboratory

We study the location and motion of single noble metal and semiconductor atoms on the Si(111) surface using a STM. These STM images contain much visual information. However, we show that physically meaningful conclusions can be deduced only with the help from first principles simulations. This talk will report on our recent theoretical and experimental effort in this direction.

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