Reactions at Semiconductor Surfaces: From Organic Monolayers to Selective Atomic Layer Deposition
Speaker:
Stacey Bent, Department of Chemical Engineering, Stanford University
Date & Time:
October 28, 2004 - 12:00pm
Location:
Room 260, Wright-Rieman Chemistry Laboratory | Reactions at Semiconductor Surfaces: From Organic Monolayers to Selective Atomic Layer Deposition Laboratory for Surface Modification |
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| Stacey Bent, Department of Chemical Engineering, Stanford University October 28, 2004 12:00 noon, Room 260, Wright-Rieman Chemistry Laboratory ABSTRACT: Semiconductor surfaces present an intriguing and technologically important template for chemical reactions. We have explored the reactivity of a variety of organic functional groups at both silicon and germanium surfaces. One goal is to obtain a sufficiently high degree of surface control and range of attachment configurations to ultimately enable the precise engineering of interfacial properties. These interfacial properties can then be used to control the generation of three dimensional structures at the micron- to the nanoscale. An example will be presented of multiple-layer deposition of an organic film directly on Ge(100)-2x1 using alternating precursor delivery in vacuum. We will also present results on the use of organic modification to control deposition of inorganic films through the process of atomic layer deposition (ALD). By using specific organic groups to inhibit ALD, area-selective deposition on a templated surface can be achieved. |