New directions in wide bandgap II-VI compounds grown by MBE
Speaker:
Maria C. Tamargo, Department of Chemistry, City College of New York
Date & Time:
November 11, 2004 - 12:00pm
Location:
Room 260, Wright-Rieman Chemistry Laboratory | New directions in wide bandgap II-VI compounds grown by MBE Laboratory for Surface Modification |
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| Maria C. Tamargo, Department of Chemistry, City College of New York November 11, 2004 12:00 Noon, Room 260, Wright-Rieman Chemistry Laboratory Historically, wide bandgap II-VI compound semiconductors have been investigated largely for the fabrication of visible light emitting devices. While during the late 80s and early 90s they enjoyed a prominent spot, the soaring success of group III-nitrides greatly hindered, if not eliminated, the motivation to pursue those applications further. However, advances in materials growth and further investigations of the materials properties point to new directions where these materials may offer special opportunities. I will present our group's recent work in materials development of the wide bandgap II-VI materials and structures grown by molecular beam epitaxy, guided by applications such as quantum cascade lasers, quantum well infrared photodetectors and "self-assembled quantum dot"-based devices. |