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GaN and ZnO Microstructures, Nanostructures and Devices

Speaker: Hock M. Ng
Date & Time: March 23, 2007 - 11:00am
Location: CORE 538

GaN and ZnO Microstructures, Nanostructures and Devices
Electrical and Computer Engineering

Hock M. Ng
11:00 a.m. - CORE 538

Nanotechnology applied to the realm of compound semiconductors can result in novel physics as well as interesting and useful device applications. The wide bandgap semiconductors, for example GaN and ZnO, have been intensively studied because of their unique material properties for optoelectronics and sensors. Micro- and nanostructures of these semiconductors can be formed either by the bottom-up or top-down approach. Using a combination of molecular beam epitaxy and chemical etch techniques, one can engineer the polarity and also the shape of the semiconductors. I will present several examples of two- and three-dimensional structures and device applications. In addition, I will highlight a low temperature solution-based approach of forming epitaxial ZnO nanostructures on GaN.

Advancing Nanotechnology - IAMDN New Microscopes


Rutgers new scanning transmission electron microscope and new helium ion microscope help researchers develop nanotechnology used to fight cancer, generate power, and create more powerful electronics. Watch the video to learn more.

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