Speaker: Hock M. Ng
Date & Time: March 23, 2007 - 11:00am
Location: CORE 538
GaN and ZnO Microstructures, Nanostructures and Devices
Electrical and Computer Engineering
Hock M. Ng
11:00 a.m. - CORE 538
Nanotechnology applied to the realm of compound semiconductors can result in novel physics as well as interesting and useful device applications. The wide bandgap semiconductors, for example GaN and ZnO, have been intensively studied because of their unique material properties for optoelectronics and sensors. Micro- and nanostructures of these semiconductors can be formed either by the bottom-up or top-down approach. Using a combination of molecular beam epitaxy and chemical etch techniques, one can engineer the polarity and also the shape of the semiconductors. I will present several examples of two- and three-dimensional structures and device applications. In addition, I will highlight a low temperature solution-based approach of forming epitaxial ZnO nanostructures on GaN.