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The role of high mobility MBE in the discovery of new semiconductor physics

Speaker: Loren Pfeiffer, Bell Laboratories, Alcatel-Lucent
Date & Time: February 18, 2008 - 4:00pm
Location: Serin Physics E385

The role of high mobility MBE in the discovery of new semiconductor physics
Physics and Astronomy

Loren Pfeiffer
Bell Laboratories, Alcatel-Lucent
4:00 PM, Serin Physics E385

I will discuss why the GaAs-AlAs interface is ideal for making near-perfect low-dimensional electron systems by MBE, and the crucial correlation between high electron mobility and low physical disorder in our MBE samples. Then I will give examples of how improving the mobility has allowed the discovery of composite fermions and other new physics that is now pointing toward a possible key role in the emerging new field of topological quantum computing. I will also touch briefly on the role of MBE in fabricating near-ideal nanostructures and in the quest to achieve Bose-Einstein condensation of semiconductor excitons.

Advancing Nanotechnology - IAMDN New Microscopes


Rutgers new scanning transmission electron microscope and new helium ion microscope help researchers develop nanotechnology used to fight cancer, generate power, and create more powerful electronics. Watch the video to learn more.

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