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The role of high mobility MBE in the discovery of new semiconductor physics

Speaker: Loren Pfeiffer, Bell Laboratories, Alcatel-Lucent
Date & Time: February 18, 2008 - 4:00pm
Location: Serin Physics E385


The role of high mobility MBE in the discovery of new semiconductor physics
Physics and Astronomy


Loren Pfeiffer
Bell Laboratories, Alcatel-Lucent
4:00 PM, Serin Physics E385

I will discuss why the GaAs-AlAs interface is ideal for making near-perfect low-dimensional electron systems by MBE, and the crucial correlation between high electron mobility and low physical disorder in our MBE samples. Then I will give examples of how improving the mobility has allowed the discovery of composite fermions and other new physics that is now pointing toward a possible key role in the emerging new field of topological quantum computing. I will also touch briefly on the role of MBE in fabricating near-ideal nanostructures and in the quest to achieve Bose-Einstein condensation of semiconductor excitons.

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