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Atomic-layer-engineered oxide-metamaterials for novel functionality

Program: Electronics, Photonics and Sensors
Researcher Name: Seongshik (Sean) Oh
Department: Physics and Astronomy
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Nano-scale heterostructure engineering in IV, III-V and II-VI semiconductors, and elemental metals has led to many discoveries and developments such as fractional quantum Hall effect, semiconductor lasers, and giant magnetoresistance. The key player behind this success is the Molecular Beam Epitaxy (MBE) technique, with which one can grow arbitrary heterostructures of atomic-precision. Prof. Oh is applying this proven technology to a newly-emerging and less-explored material system, the complex oxides (see Fig. 1 for an example). Complex oxides exhibit more copious electronic properties than do the conventional semiconductors and the elemental metals. However, complex-oxide MBE requires much higher level of technical sophistication. Prof. Oh is currently building a unique oxide-MBE system that can handle this issue effectively (see Fig. 2 for a schematic). Utilizing the new oxide-MBE system, his group will synthesize and study nanostructured oxide "metamaterials" and search for novel functionalities in these new territories.

Further details with a complete list of publications, opportunities, and contact information can be found at: http://www.physics.rutgers.edu/~ohsean/

seongshik

Figure 1: Reflection High Energy Electron Diffraction (RHEED) images of an atomic-layer-by-layer heterostructure growth, utilized in Ref. 1.

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Figure 2: Simplified schematic of the new Ultra-High Vacuum (UHV) oxide-MBE system under construction.

 

 

Reference 1: “Electric Field Effect in Insulating Cuprate Planes”, Seongshik Oh, M Warusawithana

and JN Eckstein, Phys. Rev. B 70, 064509 (2004)

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