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Mission Statement

The Institute for Advanced Materials, Devices and Nanotechnology (IAMDN) focuses on science and technology driven by the atomic scale and nanoscale manipulation of materials.

IAMDN provides a research environment where physicists, chemists, biologists, and engineers work collaboratively in advancing the basic knowledge and the underpinning technology vital to societal needs such as communications, medicine, and energy sustainability.

IAMDN spearheads education in critical technology areas. Our researchers inspire students by creating an atmosphere of excitement and creativity that fosters the development of the highly trained workforce of tomorrow.

IAMDN is the entry point for researchers and industries seeking to work with Rutgers University to provide sustainable real-world solutions to 21st-century challenges.

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Research

Nano Quiz

 golfWhich of these consumer products are manufactured using nanotechnology?

  • Fishing lure
  • Golf ball
  • Sunscreen lotion
  • All of the above  

If you answered all of the above, you're correct!

Instrumentation

Content forthcoming

LSM-IAMDN Seminar Series - Fall Semester, 2014

Seminar Organizers:  Frank Zimmerman:  This email address is being protected from spambots. You need JavaScript enabled to view it.            Phil Batson: This email address is being protected from spambots. You need JavaScript enabled to view it.
 
 
All seminars will be held in CHEM 260 at 12:00PM on Thursdays.
 
Date

Seminar

Speaker

Host

Thursday,
September 4

Disordered Photonics

Hui Cao,
Yale University
Frank Zimmermann
Thursday,
September 11

Engineering Ferroelectric Surfaces and Interfaces Through Artificial Layering

Matt Dawber,
NY Stony Brook University
Frank Zimmermann
Thursday,
September 25

LSM-IAMDN Focused Session

N/A N/A
Thursday,
October 2
Experimental Observations for the Dynamic Spreading of Liquid Puddles Philip Batson
Thursday,
October 9

TBA

TBA

TBA
Thursday,
October 16

Topological Spintronics

Nitin Samarth, Pennsylvania State University

Frank Zimmermann
Thursday,
October 23

X-ray Photoelectron Spectroscopy (XPS) for Surface Characterization of Alternative Energy Material Research

Stephanus Axnanda, BASF Frank Zimmermann
Thursday, October 30

The Role of Materials Science in Energy Efficient Information Processing Systems of the Future

Supratik Guha,
IBM
Philip Batson
Thursday, November 6

LSM-IAMDN Focused Session

N/A N/A
Thursday, November 13

Metals, oxides, semiconductors: Gate stacks for Si, SiGe, and III-V transistors

Martin Frank, IBM Yorktown Philip Batson
Eric Garfunkel
Monday, November 17

Analytical Helium Ion Microscopy?

Gregor Hlwacek, Helmholts-Zentrum Dresden-Rössendorf Germany

Torgny Gustafsson

Thursday, November 20 Modeling Surface-Surface and Molecule-Surface Interactions Made "Simple" by Subsystem Density-Functional Theory Michele Pavanello, Rutgers

Frank Zimmermann

Phil Batson

Thursday, December 11

Bilayer graphene: a unique two-dimensional electron system

Jun Zhu, Pennsylvania State University

Frank Zimmermann
Philip Batson
 
 

Last Updated: 1/15/2015

LSM-IAMDN Seminar Series - Spring Semester, 2015

Seminar Organizers:  Frank Zimmerman:  This email address is being protected from spambots. You need JavaScript enabled to view it.            Phil Batson: This email address is being protected from spambots. You need JavaScript enabled to view it.
 
 
All seminars will be held in CHEM 260 at 12:00PM on Thursdays.
 
Please check back - updated information will be posted soon.  
 
Date

Seminar

Speaker

Host

       
       
       
       
       
       
       
       
       
       
 
 

Last Updated: 1/15/2015

Policies and Procedures

pdf IAMDN-NTT Criteria-PDF

pdf IAMDN-NTT Faculty Evaluation Form

 

Please contact This email address is being protected from spambots. You need JavaScript enabled to view it., Director, Business Affairs  with inquiries regarding IAMDN Policies and Procedure.

 

 

 

 

Advances in Nanoscale Materials: March 28, 2014

Please join us for the Twenty-Eighth Annual Symposium
Laboratory for Surface Modification
 
ADVANCES IN NANOSCALE MATERIALS IMAGING
 
Friday, March 28, 2014
Rutgers University, Busch Campus, Fiber Optics Auditorium
 
The symposium will celebrate the construction of two world leading microscopy facilities at Rutgers:

 

·        Scanning Transmission Electron Microscope (STEM): To create new materials for efficient energy production and storage, catalysis, nanoelectronics and photonics ...read more.

·       Helium Ion Microscope: To create advances in fields of drug delivery to the creation of nanometer orifices to explore DNA sequencing and the formation of quantum structures for advanced computing and communications ...read more.

 

There will be opportunities to visit these facilities and to discuss future collaborations.

 

The invited speakers are world renowned experts in these fields:

 

Prof. John Silcox                        Cornell University

Dr. Ondrej Krivanek, FRS         President, Nion Corporation

Dr. John Notte                           Director, R&D, Carl Zeiss Microscopy LLC

Dr. J. Albert Schultz                  President, Ionwerks Inc

 

Registration is free, however in order to participate, prior registration is requested. Breakfast and lunch will be provided for all attendees.  Please Email Ms. Gwen Chupka to register at This email address is being protected from spambots. You need JavaScript enabled to view it..

 

Additional information on the symposium can be found on the LSM website:  lsm.rutgers.edu/, and the IAMDN website:  iamdn.rutgers.edu

  

Upcoming Seminars / Events

Sign Up for Seminars Email

Date & TimeTitleSpeakerEvent CategoryLocation

TBA Condensed Matter

Categories: Physics - Condensed Matter (PHYS-CM)
Speaker: Anatoli Polkovnikov, Boston University
Date & Time: September 25, 2012 - 1:30pm
Location: Serin 385

Superconducting Nanocircuits for Topologically Protected Qubits

Program: Electronics, Photonics and Sensors
Researcher Name: Michael Gershenson
Department: Physics and Astronomy
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.
Home Page: Link
Collaborator: S. Gladchenko, D. Olaya, E. Dupont-Ferrier, B. Douçot, L.B. Ioffe

For successful realization of a quantum computer, its building blocks (qubits) should be simultaneously scalable and sufficiently protected from environmental noise. The research at Rutgers University, Physics and Astronomy Department focuses on the design, fabrication and characterization of a fundamentally new class of fault-tolerant logical elements of a quantum computer (a.k.a. qubits). This novel approach is based on the ideas of topological protection: errors can be prevented at the “hardware” level, by building a fault-free (topologically protected) logical qubit from “faulty” physical qubits with properly engineered interactions between them. Recently we performed the proof-of-concept experiments with prototypes of protected superconducting qubits which demonstrate the feasibility of this approach. In particular, it was observed that the prototype array of Josephson elements is protected against magnetic flux variations, in agreement with theoretical predictions.

S. Gladchenko, D. Olaya, E. Dupont-Ferrier, B. Douçot, L.B. Ioffe, and M.E. Gershenson, "Superconducting Nanocircuits for Topologically Protected Qubits", Nature Physics 5, 48-53 (2009).

Photonic Crystals, Silicon Photonics, and Nanophotonics

Program: Electronics, Photonics and Sensors
Researcher Name: Wei Jiang
Department: Electrical and Computer Engineering
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.
Home Page: Link

Prof. W. Jiang’s research aims at developing novel photonic devices for communications, sensing, beam steering and other applications. The bottom chart shows:

(a) AFM images of a polymeric photonic crystal made by nanoimprint;

(b) The world’s first 1GHz photonic crystal waveguide modulator (top: schematic, bottom: micrograph of the modulator made on silicon);

(c) Slot photonic crystal waveguide for sensing and modulation (left: SEM image, right: concentrated field in the slot);

(d) Curvature plot for photonic crystal dispersion surfaces (peaks near the corners imply high sensitivities of this photonic crystal).

In many cases, we start from fundamental physics analysis, explore innovative engineering design and fabrication methods, and improve the structures and functions of certain photonic devices beyond the conventional approaches/architectures. Our research is closely related to active research topics such as the slow light effect, silicon photonics for monolithic optoelectronic integration and on-chip optical interconnects, and the superprism effect.

Organic Electronics and Functional Inorganic Electronic Devices

Program: Electronics, Photonics and Sensors
Researcher Name: Vitaly Podzorov
Department: Physics and Astronomy
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.
Home Page: Link

 


Figure 1: The record high mobility free-standing OFETs fabricated in our group using the technologies developed at Rutgers that involve the growth of high-purity molecular crystals, deposition of low-resistance contacts, and fabrication of defect-free interface with a gate dielectric [1].



Figure 2: (top) Commercial full-color OLED display by SONY, which is only 2 mm thick [2]; (bottom) Flexible electronic paper produced by Philips (left) and Lucent (right).



Figure 3: A series of organic-based photovoltaic approaches have been demonstrated and are now under intense investigation [3].

Organic Electronics is a new research area directed toward development of a new generation of electronic devices, such as organic field-effect transistors (OFETs) [1] (Fig. 1), light emitting displays (OLEDs) [2] (Fig. 2) and photo-voltaic cells (OPV) [3] (Fig. 3). These devices are based on conjugated small molecules and polymers – the organic semiconducting materials that can help us address a number of important global issues, such as clean renewable energy sources, low-power flexible and wearable electronics (e.g., rollable computer and TV screens, electronic paper and solar cells), energy efficient solid state lighting, photo-detectors and green chemistry. These kinds of technologies are becoming increasingly important in modern world, but yet they are difficult (or even impossible) to tackle using conventional inorganic semiconductors, such as silicon. In addition, enormous possibilities of synthetic chemistry in tailoring electronic properties of organic molecules and availability of cheap solution-based and printing deposition techniques make organic semiconductors an extremely viable novel technology of the future.

Although applied organic electronics is rapidly developing, with the first commercial products already available on the market (see, e.g., the first SONY full color 2-mm thick OLED display and Philips electronic paper at Fig. 2), many fundamental aspects related to charge (polaron) and energy (exciton) generation and transport remain poorly understood in organic semiconductors. Our group’s interests are in the physics of basic electronic processes that determine operation of organic transistors and solar cells. Recently developed single-crystal OFETs (see, e.g. [4,5]) allow studies of charge transport and optical properties of organic semiconductors that are not limited by disorder. Owing to a great reproducibility and a very low density of defects (traps) in these devices, experimental observation of a band-like polaronic transport [6,7], Hall effect [8] and novel photo-induced phenomena [9,10,11] became possible in OFETs for the first time. Availability of well characterized single-crystal devices opens new exciting opportunities for research on charge carrier transport, photo-physics and sensing applications of OFETs. In addition, novel nanoscale surface functionalization techniques using self-assembled monolayers are emerging for organic semiconductors [12].

Some particular projects related to Organic Electronics that we are working on in our lab are: 1. High-performance single-crystal OFETs. Studies of charge transport and photo-physical properties of these devices to understand the fundamentals of the charge carrier mobility. 2. Conjugated polymer OFETs. Studies of the physics of charge transport. 3. Memory devices based on organic semiconductors. 4. Excitons in highly crystalline organic semiconductors. 5. Physics of photovoltaic effect in highly crystalline organic (and hybrid) solar cells. 6. Molecular self-assembly at the surface of organic and inorganic semiconductors and its effect on electronic and optical properties of these materials.

Functional devices based on novel inorganic semiconductors (e.g., field-effect transistors based on novel oxides) is another very young and important area, in which we are involved. These materials frequently exhibit a variety of interesting electronic phases and strongly correlated effects, such as spin and charge density waves or superconductivity. By fabricating a high quality field-effect devices at the surface of these materials, one can vary the carrier concentration in these systems by applying a gate voltage, instead of introducing chemical dopants, and achieve a controllable and tunable functional devices, in which the physical properties could in principle be varied across phase transitions. Our group was the first to demonstrate FET devices based on layered inorganic semiconductors from the WSe2 (dichalcogenides) family [13] (Fig. 4).

 



    REFERENCES:

  1. Book: “Organic Field-Effect Transistors”, Ed. Z. Bao, (Taylor & Francis, 2007)
  2. S. R. Forrest, “The path to ubiquitous and low-cost organic electronic appliances on plastic”, Nature, 428, 911 (2004)
  3. “Organic based photovoltaics”, MRS Bulletin, Vol. 30, (2005)
  4. R. W. I. de Boer, A. F. Morpurgo, M. E. Gershenson, V. Podzorov, Phys. Stat. Sol. (a) 201, 1302 (2004);
  5. M. E. Gershenson, V. Podzorov, and A. F. Morpurgo, Rev. Mod. Phys. 78, 973 (2006)
  6. V. Podzorov et al., Phys. Rev. Lett. 93, 086602 (2004)
  7. V. C. Sundar et al., Science 303, 1644 (2004)
  8. V. Podzorov et al., Phys. Rev. Lett. 95, 226601 (2005)
  9. V. Podzorov et al., Phys. Rev. Lett. 95, 016602 (2005)
  10. H. Najafov et al., Phys. Rev. Lett. 96, 056604 (2006)
  11. M. F. Calhoun, C. Hsieh and V. Podzorov, Phys. Rev. Lett. 98, 096402 (2007)
  12. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, Nature Mat. 7, 84 (2008)
  13. Podzorov et al., “High-mobility field-effect transistors based on transition metal dichalcogenides”, Appl. Phys. Lett. 84 3301 (2004)

Nano-Materials and Devices

Program: Electronics, Photonics and Sensors
Researcher Name: Manish Chhowalla
Department: Materials Science and Engineering
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.
Home Page: Link

Prof. Chhlowalla's research is geared towards synthesis and applications of carbon and related nano-materials. They not only want to efficiently synthesize and understand the growth mechanism of carbon nano-materials such as single and multi-walled nanotubes, nano-onions and single wall nanohorns, they also want to utilize them in electronic, energy storage and biological applications.

Graphene-based thin film electronic devices
Graphene

A single sheet of graphite, or graphene, possesses extremely interesting properties arising from its unique energy dispersion. Graphene can be produced in large quantities and processed in a form of solution once appropriate chemical functionalization is applied. We have solution-processed graphene to fabricate a large area ultra-thin films which could be useful for macro-scale electronic devices such as photovoltaics, sensors, and thin film transistors. One of the major challenges of this work is the complete removal of functional groups from the starting graphene oxide solution (which are initially required for processability) to fully recover the intrinsic properties of graphene. Our aim is to optimize the opto-electronic properties of solution-processed graphene and incorporate it into large area thin film electronics.

Design and Characterization of WGM NEMS Resonators for Nanoscopic Sensing

Program: Electronics, Photonics and Sensors
Researcher Name: Zhixiong Guo
Department: Mechanical and Aerospace Engineering
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.

Dr. Guo's group is studying whispering-gallery-mode (WGM) resonant phenomena for probing nanoscopic and atomic entities, such as biomolecules and peptides. If we consider a measurable resonant frequency shift (Df / f) = 10-5 and a WGM resonator of radius r ~ 10 µm, then the smallest "measurable" thickness change is (Df / f) r ~ 0.1 nm — sub-nanometer change is detectable!

The figure at left shows a WGM resonator fabricated by the Nanofabrication Research Laboratory, Lucent Technologies, Bell Laboratories, based on our initial design. The fabrication project is sponsored by the New Jersey Nanotechnology Consortium. Experimental studies in characterizing the WGM resonators are on-going, and simulation-based optimal design is underway.

The figure below shows a concept study as proof for WGM nanoscopic biosensing capabilities. This phase of the project is in collaboration with Prof. Hu of the Rutgers College of Pharmacy.

Catalytic Flame Synthesis of Carbon Nanotubes

Program: Electronics, Photonics and Sensors
Researcher Name: Stephen Tse
Department: Mechanical and Aerospace Engineering
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Home Page: Link

Carbon nanotubes (CNTs) are synthesized utilizing novel, electrically-enhanced, oxy-fuel flame-based, catalytic chemical vapor deposition methods. The program integrates synthesis, in-situ laser-based diagnosis, and subsequent materials characterization of CNTs to optimize CNT production at high rates with prescribed characteristics (e.g. single- or multi-walled, diameter, helicity). Such a paradigm allows not only for detailed fundamental study of the mechanisms involved in CNT formation and growth but also for the active control of those basic processes, so that CNTs with tailored physical properties can be produced in large quantities with high purity.

Atomic-layer-engineered oxide-metamaterials for novel functionality

Program: Electronics, Photonics and Sensors
Researcher Name: Seongshik (Sean) Oh
Department: Physics and Astronomy
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.
Home Page: Link

Nano-scale heterostructure engineering in IV, III-V and II-VI semiconductors, and elemental metals has led to many discoveries and developments such as fractional quantum Hall effect, semiconductor lasers, and giant magnetoresistance. The key player behind this success is the Molecular Beam Epitaxy (MBE) technique, with which one can grow arbitrary heterostructures of atomic-precision. Prof. Oh is applying this proven technology to a newly-emerging and less-explored material system, the complex oxides (see Fig. 1 for an example). Complex oxides exhibit more copious electronic properties than do the conventional semiconductors and the elemental metals. However, complex-oxide MBE requires much higher level of technical sophistication. Prof. Oh is currently building a unique oxide-MBE system that can handle this issue effectively (see Fig. 2 for a schematic). Utilizing the new oxide-MBE system, his group will synthesize and study nanostructured oxide "metamaterials" and search for novel functionalities in these new territories.

Further details with a complete list of publications, opportunities, and contact information can be found at: http://www.physics.rutgers.edu/~ohsean/

seongshik

Figure 1: Reflection High Energy Electron Diffraction (RHEED) images of an atomic-layer-by-layer heterostructure growth, utilized in Ref. 1.

seongshik2 


Figure 2: Simplified schematic of the new Ultra-High Vacuum (UHV) oxide-MBE system under construction.

 

 

Reference 1: “Electric Field Effect in Insulating Cuprate Planes”, Seongshik Oh, M Warusawithana

and JN Eckstein, Phys. Rev. B 70, 064509 (2004)

Polariton Condensation and Dynamics

Categories: Physics - Condensed Matter (PHYS-CM)
Speaker: P. Littlewood, Argonne National Lab
Date & Time: October 22, 2013 - 1:30pm
Location: SRN 385

The engineering of optical microcavities allow us to hybridize electronic excitations with photons to create a composite boson called a polariton that has a very light mass, and recent experiments provide good evidence for a high-temperature Bose condensate. Polariton systems also offer an opportunity to use optical pumping to study quantum dynamics of a many body system outside equilibrium, in a new kind of cold atom laboratory. As in electronic strongly correlated systems, some of the most strongly interacting polariton systems have strong electron-phonon coupling as well. I will also discuss aspects of non-linear polariton dynamics, and the opportunity to create states with non-trivial entanglement by tailored optical pumping.

Franklin Fellows Program

Date: February 29, 2012
 
About the Franklin Fellows Program: President Obama has stated that “government does not have all the answers, and…public officials need to draw on what citizens know.” Therefore, he directed the Administration “to find new ways of tapping the knowledge and experience of ordinary Americans – scientists and civic leaders, educators and entrepreneurs – because the way to solve the problems of our time…is by involving the American people in shaping the policies that affect their lives.”

Click here for more info

New Materials for Energy Storage and Conversion

Program: Energy and Environment
Department: Chemistry and Chemical Biology
Professor Li and her research team are engaged in design, synthesis, characterization and modification of new materials potentially important for energy storage and conversion. One area of research focuses on the development of hybrid semiconductors. Figure 1 shows two members from a unprecedented class of inorganic-organic hybrid semiconductor materials comprised of sub-nanometer-sized II-VI semiconductor motifs (inorganic component) and mono- or di-amine molecules (organic component). These hybrid materials possess a number of improved and enhanced properties over their parent bulk semiconductors, including broad band-gap tunability and high absorption coefficients, all desirable for optoelectronic applications. They also possess a rich structural chemistry and exhibit very interesting structure related photoemission, thermal expansion and thermal electric properties. More significantly, they show exceptionally strong structure-, rather than size-induced, quantum confinement effect (QCE), and such confinement can be systematically tuned by modifying the composition, crystal structure, and dimensionality of the inorganic motifs. Another area of focus is on microporous metal organic materials (MMOMs). As a subclass of MOFs these materials contain micropores (pore diameter less than 20Å) and demonstrate porosity associated multi-fold functionality that show promise for applications in gas storage, separation and catalysis. Compared to other porous materials such as zeolites and carbon nanotubes, MMOFs demonstrate numerous desirable features. Their crystal structures (e.g. dimensionality, framework connectivity, and topology), compositions (e.g. the type and form of metals and ligands) and pore properties (e.g., pore size and shape, pore volume and the chemical functionality of the pore walls) can be deliberately and systematically tailored to enhance targeted properties and to achieve improved performance. Figure 2 shows a highly porous MMOF structure.



Fig. 1. Hybrid semiconductors made of II-VI

slabs and organic diamine (left) and

mono-amine (right) molecules.

 

Fig. 2. AMMOF structure composed of M2

paddle wheel SBUs and TED molecules.

 

HOMO and LUMO energies of N3 dye on TiO2(110)

Program: Energy and Environment
Department: Physics and Astronomy
Functional DSSCs typically employ anatase TiO2 nanoparticles. To obtain an atomistic view of the dye molecule-TiO2 surface interaction, we are studying the adsorption of N3 dye on the single crystal TiO2(110) surface. A scanning tunneling microscope (STM) images of the atomically clean and well-ordered TiO2(110) surface, shown at the upper left, demonstrates that large, well-ordered, atomically flat terraces can be obtained. The lower image illustrates how the surface can be passivated by exposure to pivalic acid in UHV forming a pivalate layer that retains the surface morphology. Upon removal from the UHV chamber, the surface can be sensitized to N3 dye in solution, where in an exchange reaction adsorbed pivalate ions are replaced by dye molecules. After re-insertion to the UHV chamber, we perform UPS and InvPE measurements to determine the relative alignment of the HOMO and LUMO levels of the molecule, and the conduction and valence band edges of the substrate. The figure below shows photoemission and inverse photoemission of the occupied and unoccupied states, respectively of the clean and N3-dye covered TiO2(110) surface. The HOMO and LUMO energies are 0.9 eV above the TiO2 valence band edge and 0.5 eV below the conduction band edge, respectively. A systematic study of various dye/substrate combinations would enable tailoring DSSC properties.

Confocal Microscopy

Facility Type: Smaller or Individual Faculty Laboratory
 

 
Click here for the Facility for Confocal Imaging of Biomaterials.

Giving to IAMDN

Rutgers Institute for Advanced Materials, Devices and Nanotechnology serves as a focus for cutting-edge research in the creation and understanding of new materials and their applications.  Topical areas include materials applications for alternative energy needs, biological and medical science, information and computing technologies and fundamental approaches to new solid state forms of matter.  This research, and its educational component, produces the technologies of the future and the scientists and engineers to create the future.

Rutgers IAMDN accepts support from federal agencies, corporations, foundations, and private individuals. Making donations and gifts to further research at Rutgers IAMDN is simple. The Rutgers University Foundation is a 501(c)(3) tax-exempt organization. Gifts and donations to Rutgers IAMDN made through the Rutgers University Foundation are deductible for federal income, gift and estate tax purposes.

Please contact:
Nancy Pamula
Rutgers Institute for Advanced Materials, Devices and Nanotechnology
607 Taylor Road
Piscataway, NJ 08854
Phone: 732-445-1388
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