Celler, George K.

 IAMDN Research Staff
 Materials Science and Engineering
Research Interests: 
 Electronic materials – processing and characterization. Heterogeneous integration of single crystalline SiC with other electronic substrates. Semiconductor-on-Insulator formation and applications (electronic, photonic, MEMS). Wafer bonding and ion-beam assisted layer transfer. Integrated photonics and optical communications. Photovoltaic materials and devices. Laser processing of materials. Advanced lithography (beyond optical).

Professor George K. Celler:

Fellow of the American Physical Society and of the Electrochemical Society (ECS). Recipient of the Electronics Division Award of the ECS. Associate Editor of the ECS Journal of Solid State Science and Technology and of ECS Solid State Letters.
Received 22 US patents and authored over 200 technical papers.
30 representative publications:
1.   Diffusion and Impurity Segregation in Hydrogen-Implanted Silicon Carbide, A. Barcz, M. Kozubal, R. Jakiela, J. Ratajczak, J. Dyczewski, K. Golaszewska, T. Wojciechowski, and G. K. Celler, J. Appl. Phys. 115,  223710 (2014) http://dx.doi.org/10.1063/1.4882996

2.   Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films, V. P. Amarasinghe, L. Wielunski, A. Barcz, L. C. Feldman, and G. K. Celler, ECS Journal of Solid State Science and Techn. 3 (3) P37-P42 (2014). http://dx.doi.org/10.1149/2.001404jss

3.   Lithography and doping in strained Si towards atomically precise device fabrication, W. C. T. Lee, S. R. McKibbin, D. L. Thompson, K. Xue, G. Scappucci, N. Bishop, G. K. Celler, M. S. Carroll and M. Y. Simmons, Nanotechnology 25 145302 (2014)  doi:10.1088/0957-4484/25/14/145302

4.   Pulsed Laser Assisted Exfoliation of Hydrogen Ion Implanted Single Crystalline SiC Thin Layers, Tuğrul Özel, Thanongsak Thepsonthi, Voshadhi Amarasinghe and George K. Celler, Proceedings of NAMRI/SME, Vol. 41 (2013).

5.   Thermo-optic characteristics and switching power limit of slow-light photonic crystal structures on a silicon-on-insulator platform, Manjit Chahal, George K. Celler, Yogesh Jaluria, and Wei Jiang,  Optics Express 20(4) 4225  (2012).

6.   Symmetry in Strain Engineering of Nanomembranes: Making New Strained Materials, Deborah M. Paskiewicz, Shelley A. Scott, Donald E. Savage, George K. Celler, and Max G. Lagally, ACS Nano 5 (7) 5532-5542 (2011).

7.   12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics, Lei Sun, Guoxuan Qin, Jung-Hun Seo, George K. Celler, Weidong Zhou, and Zhenqiang Ma, Small 6 (22), 2553-2557 (2010).

8.   Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting, Diefeng Gu, Helmut Baumgart, Konstantin K. Bourdelle, George K. Celler, and A. A. Elmustafa, Japanese J. Appl. Phys. 48, 101202 (2009).

9.   Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes, Hao-Chih Yuan, Jonghyun Shin, Guoxuan Qin, Lei Sun, Pallab Bhattacharya, Max G. Lagally, George K. Celler, and Zhenqiang Ma, Appl. Phys. Lett. 94, 013102 (2009). 

10.  Elastically relaxed free-standing strained-silicon nanomembranes, Michelle M. Roberts, Levente J. Klein, Donald E. Savage, Keith A. Slinker, Mark Friesen, George Celler, Mark A. Eriksson, Max G. Lagally, Nature Materials 5, pp. 388-393 (May 2006).

11.  Electronic transport in nanometre-scale silicon-on-insulator membranes, Pengpeng Zhang, Emma Tevaarwerk, Byoung-Nam Park, Donald E. Savage, George K. Celler, Irena Knezevic, Paul G. Evans, Mark A. Eriksson, and Max G. Lagally, Nature 439, pp. 703-706 (Feb. 9, 2006)

12.  Fabrication of highly reflecting epitaxy-ready Si/SiO2 Bragg reflectors, S. Akiyama, F. J. Grawert, J. Liu, K. Wada, G, K. Celler , L. C. Kimerling, F. X. Kaertner,  IEEE Photonics Technology Letters 17, pp. 1456-1458 ( 2005).

13.  Frontiers of silicon-on-insulator, G. K. Celler and Sorin Cristoloveanu, J. Appl.  Phys. 93, pp. 4955-4978 (2003). http://dx.doi.org/10.1063/1.1558223

14.  Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultrathin Silicon Films for Deep Submicrometer Technology Application, D. Esseni, M. Mastrapasqua, G. K. Celler, C. Fiegna,  L. Selmi, E. Sangiorgi, IEEE Transaction on Electron Devices 48, 2842-50 (2001).

15.  Etching of Silicon by the RCA Standard Clean 1, G. K. Celler, D. L. Barr, and J. M. Rosamilia, Electrochem. and Solid State  Lett. 3, 47 (2000).

16.  Sub-0.1 µm NMOS Transistors Fabricated Using Laser-Plasma Point-Source X-ray Lithography, G. E. Rittenhouse, W. M. Mansfield, A. Kornblit, R. A. Cirelli, D. Tomes, G. K.Celler, IEEE Electron Dev. Letters 16, 322, (1995).

17.  Formation of Monolithic Masks for 0.25 mm X-Ray Lithography, G. K. Celler, L. E. Trimble, J. Frackoviak, C. W. Jurgensen, R. R. Kola, A. E. Novembre, and G. R. Weber, Appl. Phys. Lett. 59, 3105 (1991).

18.  Ultra-Fast (0.5 mm) CMOS Circuits in Fully Depleted SOI Films, A. Kamgar, S. J. Hillenius, H.-I. Cong, R. L. Field, W. S. Lindenberger, G. K. Celler, L. E. Trimble, and T. T. Sheng, IEEE Trans. Electron Dev. 39, 640 (1992).

19.  Catalytic Effect of SiO on Thermomigration of Impurities in SiO2, G. K. Celler and L. E. Trimble, Appl. Phys. Lett.  54, 1427 (1989).

20.  Precipitation of Group V Elements and Ge in SiO2 and their Drift in a Temperature Gradient, G. K. Celler, L. E. Trimble, T. T. Sheng, S. G. Kosinski,  and K. W. West, Appl. Phys. Lett.  53, 1178 (1988).
21.  Release of As from SiO2 by a Temperature Gradient and Formation of Buried n+ Conductive Layers in Si-on-SiO2 Structures, G. K. Celler and L. E. Trimble, Appl. Phys. Lett. 52, 1425 (1988).

22.  Formation of Buried Layers of b SiC using Ion Beam Synthesis and Incoherent Lamp Annealing, K. J. Reeson, P. L. F. Hemment, J. Stoemenos, J. Davis, and G. K. Celler, Appl. Phys. Lett. 51, 2242 (1987).

23.  High Quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing, G. K. Celler, P. L. F. Hemment, K. W. West, and J. M. Gibson, Appl. Phys. Lett.  48, 532 (1986).

24.  Dielectrically Isolated Thick Si Films by Lateral Epitaxy from the Melt, G. K. Celler, McD. Robinson, D. J. Lischner, and L. E. Trimble, J. Electrochem. Soc. 132, pp. 211-219 (1985).

25.  Spatial Melt Instabilities in Radiatively Melted Crystalline Silicon, G. K. Celler, McD. Robinson, L. E. Trimble, and D. J. Lischner, Appl. Phys. Lett. 43, 868, (1983).

26.  Laser Crystallization of Thin Si Films on Amorphous Insulating Substrates, G. K. Celler, J. of Crystal Growth 63, 429 (1983).

27.  Effects of Grain Boundaries on Laser Crystallized Poly-Si MOSFET's, K. K. Ng, G. K. Celler, E. I. Povilonis, R. C. Frye, H. J. Leamy, and S. M. Sze, IEEE Electr. Device Lett. EDL-2, 316 (1981).

28.  Periodic Regrowth Phenomena Produced by Laser Annealing of Ion Implanted Silicon, H. J. Leamy, G. A. Rozgonyi, T. T. Sheng, and G. K. Celler, Appl. Phys. Lett. 32, 535 (1978).

29.  Spatially Controlled Crystal Regrowth of Ion Implanted Silicon by Laser Irradiation, G. K. Celler, J. M. Poate, and L. C. Kimerling, Appl. Phys. Lett. 32, 464 (1978).

30.  Effect of Screening of Piezoelectric Phonon Fields on Absorption Edge Broadening in GaAs, G. K. Celler and R. Bray, Phys. Rev. Lett. 37, 1422 (1976).
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